HEMTs utilize heterojunction between two semiconducting materials to confine electrons to a triangular quantum well. Acceptable thermal conductivity.ĪlGaN/GaN HEMTs transistor don’t need doping to obtain a high electron density. Most used material, cheap, good quality commercial wafers. switch, amplifiers, oscillators To satisfy the growing demands of High Power High Speed High Efficiency communications Conventional HEMTs use a AlGaAs/GaAs AlGaN/GaNĥ Gallium Nitrate High electron density(Polarization effects)Īdequate for high power amplifiers High Breakdown voltage Large heat capacity Necessary to growth in a wafer of another material Molecular Beam Epitaxy Metal Organic Vapor Beam EpitaxyĦ Substrate Material Sapphire Silicon Carbide Silicon Presented by: Date: Sujana Korrapati, Sai Divya AnneĢ Outline Introduction GaN HEMT structure and operation principlesĭesign rules for AlGaN/GaN HEMT InP HEMT Comparison of GaN HEMT with GaAs HEMT Applications in Technology Summaryģ Introduction Transistors are used in electronic devicesĮ.g. We will discuss different types of HEMTs and their Applications.

Abstract: HEMT is a field effect transistor incorporating a junction between two materials with different band gaps as the channel.

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